Research Interests:

•  Science and technology of materials and devices for modern electronics and optoelectronics applications.
•  Epitaxial growth of novel low-dimensional group-IV semiconductors structures by Molecular Beam Epitaxy (MBE) and Chemical Vapour Deposition (CVD) techniques.
• Complex characterization of novel materials by the following techniques: Magnetotransport, Hall and resistivity, low-frequency noise, I-V, C-V, G-V, RHEED, XPS, X-ray diffraction and reflectivity, SIMS, RBS, TEM, SEM, AFM, STM, Optical Microscopy,  Raman spectroscopy, Spectroscopic ellipsometry, Photoluminescence, FTIR.
• Fabrication and characterization of electronic and optoelectronic semiconductor devices.

   

Selected publications:

1)      M. Myronov, K. Sawano, Y. Shiraki, K.M. Itoh “Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a Ge quantum well” Applied Physics Express 1, 051402, 2008.

2)      M. Myronov, K. Sawano, Y. Shiraki, K.M. Itoh “Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well”  Applied Physics Express 1, 021402, 2008.

3)      M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, K.M. Itoh “Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room-temperature in the SiGe heterostructures” Applied Physics Letters 91 (8), 082108, 2007.

4)      M. Myronov, Y. Shiraki, T. Mouri and K.M. Itoh “Enhancement of room temperature holes conductivity in narrow and strained Ge quantum well by double-side modulation doping” Applied Physics Letters 90 (19), 192108, 2007.

5)      M. Myronov and Y. Shiraki “Strain relaxation and surface morphology of ultra thin high Ge content SiGe epilayers grown on Si(001) substrate”. Japanese Journal of Applied Physics 46 (2) pp.721-725, 2007.

6)      M. Myronov, C.P. Parry, O.A. Mironov and E.H.C. Parker “Ultrahigh room-temperature hole mobility in SiGe quantum well” Applied Physics Letters Vol. 85, N 15, pp.3154-3156, 2004.

7)     T. Irisawa, M. Myronov, O.A. Mironov, E.H.C. Parker, K. Nakagawa, M. Murata, S. Koh and Y. Shiraki “Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructure”. Applied Physics Letters, Vol. 82, N 9, pp.1425-1427, 2003.

8)      M. Myronov, T. Irisawa, O.A. Mironov, S. Koh, Y. Shiraki, T.E. Whall, and E.H.C. Parker “Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si_0.33Ge_0.67/Si(001) p-type modulation doped heterostructures”. Applied Physics Letters, Vol. 80, N17, pp.3117-3119, 2002.