Prof. Marin Alexe
Physics and engineering of complex oxide thins films
Thin film growth and characterization: metal oxide ferroelectric/multiferroic thin film deposition, optical and high-frequency applications; pulsed laser deposition and chemical solution deposition; oxide thin film heterostructures; growth mechanisms and defect structures; structure-property-processing interrelationships. Oxides-semiconductor, oxide-metal and oxide-oxide interfaces and their properties.
Nanoscience & nanotechnology, ferroelectric nanostructures and ultra-thin films
Nano-fabrication technologies; novel physical phenomena in electronic and photonic materials with shrinking dimensions. Size effects in nanoscale ferroelectric materials. Physics and micro- and nano-engineering of thin film devices (dielectric or magnetic multi-layers, multi-functional thin film devices, sensors, micro-actuators, non-volatile memories, DRAMs); multiferroic tunnel junctions.
Non-volatile information storage technologies: ferroelectric random access memories; integrated optical devices for information processing and storage; "smart" thin film for sensors and actuators. Physics and technology of MOS devices including Metal-Ferroelectric-Semiconductor devices; non-volatile memories based on new mechanisms. Integration of oxides with other materials.
Department of Physics, University of Warwick, Coventry, CV4 7AL
Telephone: +44 (0)24 765 28063
Fax: +44 (0)24 76150897
E-Mail: M.Alexe (at) warwick.ac.uk