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Thermal Oxidation and Annealing

The facility is equipped with a range of furnace units. Some units are capable of thermal oxidation of substrates, others are capable of annealing processes and some are capable of both.

 

Thermal Oxidation

  • Carbolite CTF18300 tube furnace with oxidizing atmosphere. Gas flow up to 10 SLM and temperature up to 1750°C. Supports substrates up to 75mm.
  • Hitech oxidation furnace. Precision programmable flow of inert and oxidizing gases from 0.1 to 10 SLM. Multistage programmable temperature profile. Temperatures up to 1700°C with inert atmospheres and 1400°C with oxidizing atmospheres.

 

Annealing

  • Carbolite CTF18300 tube furnace with inert and forming gas atmospheres. Gas flow up to 10 SLM and temperature up to 1750°C. Supports substrates up to 75mm.
  • Thermco minibrute tube furnace incorporating inert and atmospheres. Gas flow up to 7 SLM and temperatures up to 1000°C. Supports substrates up to 4" diameter
  • AGA Heatpulse 610 rapid thermal annealler (RTA). Inert atmosphere processing up to 1300°C. Ramp rates up to 200°C/s.

Wafers being loaded into oxidation furnace

Diagram showing thermal oxidation

Thermal oxidation of silicon carbide