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* 53. Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells
T. Rahman, A. To, M.E. Pollard, N.E. Grant, J. Colwell, D.N.R. Payne, J.D. Murphy, D.M. Bagnall, B. Hoex, S.A. Boden
Progress in Photovoltaics: Research and Applications, published online (2017)
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* 52. Temporary surface passivation for characterisation of bulk defects in silicon: a review
N.E. Grant, J.D. Murphy
Physica Status Solid Rapid Research Letters, 11 1700243 (2017)
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* 51. Superacid-treated silicon surfaces: extending the limit of carrier lifetime for photovoltaic applications
N.E. Grant, T. Niewelt, N.R. Wilson, E.C. Wheeler-Jones, J. Bullock, M. Al-Amin, M.C. Schubert, A.C. van Veen, A. Javey, J.D. Murphy
IEEE Journal of Photovoltaics, 7 1574 (2017)
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* 50. Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon
M. Al-Amin, J.D. Murphy
IEEE Journal of Photovoltaics, 7 1519 (2017)
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* 49. Low-temperature saw damage gettering to improve minority carrier lifetime in multicrystalline silicon
M. Al-Amin, N.E. Grant, J.D. Murphy
Physica Status Solidi Rapid Research Letters, 11 1700268 (2017)
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* 48. Recombination via transition metals in solar silicon; the significance of hydrogen-metal reactions and lattice sites of metal atoms
J. Mullins, S. Leonard, V.P. Markevich, I.D. Hawkins, P. Santos, J. Coutinho, A. Marinopoulos, J.D. Murphy, M.P. Halsall, A.R. Peaker
Physica Status Solidi A, 214 1700304 (2017)
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* 47. Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
T. Niewelt, M. Selinger, N.E. Grant, W.M. Kwapil, J.D. Murphy, M.C. Schubert
Journal of Applied Physics, 121 185702 (2017)
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* 46. Passivation effects on low-temperature gettering in multicrystalline silicon
M. Al-Amin, J.D. Murphy
IEEE Journal of Photovoltaics, 7 68 (2017)
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* 45. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
A.Y. Liu, C. Sun, V.P. Markevich, A.R. Peaker, J.D. Murphy, D. Macdonald
Journal of Applied Physics, 120 193103 (2016)
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44. Hydrogenation effect on low temperature internal gettering in multicrystalline silicon
M. Al-Amin, J.D. Murphy
Proceedings of the 43rd IEEE Photovoltaics Specialist Conference (PVSC 2016), pages 0585 to 0590 (2016)

43. Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon
N.E. Grant, V.P. Markevich, J. Mullins, A.R. Peaker, F. Rougieux, D. Macdonald, J.D. Murphy
Physica Status Solidi A, 213 2844 (2016)

* 42. Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering
M. Al-Amin, J.D. Murphy
Journal of Applied Physics, 119 235704 (2016)
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M. Al-Amin, J.D. Murphy
Invited paper in Solid State Phenomena, 242 109 (2016)
Open access via the above link.

40. Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?
F.E. Rougieux, N.E. Grant, D. Macdonald, J.D. Murphy
Proceedings of the IEEE 42nd Photovoltaic Specialists Conference (PVSC 2015) (2015)

* 39. The effect of oxide precipitates on minority carrier lifetime in n-type silicon
J.D. Murphy, M. Al-Amin, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 118 215706 (2015)
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38. Evidence for an iron-hydrogen complex in p-type silicon
S. Leonard, V.P. Markevich, A.R. Peaker, B. Hamilton, J.D. Murphy
Applied Physics Letters, 107 032103 (2015)

* 37. Influence of annealing and bulk hydrogenation on lifetime limiting defects in nitrogen-doped floating zone silicon
F.E. Rougieux, N.E. Grant, C. Barugkin, D. Macdonald, J.D. Murphy
IEEE Journal of Photovoltaics, 5 495 (2015)
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* 36. Competitive gettering of iron in silicon photovoltaics: oxide precipitates versus phosphorus diffusion
J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 116 053514 (2014)
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35. Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
A.L. Blum, J.S. Swirhun, R.A. Sinton, F. Yan, S. Herasimenka, T. Roth, K. Lauer, J. Haunschild, B. Lim, K. Bothe, Z. Hameiri, B. Seipel, R. Xiong, M. Dhamrin, J.D. Murphy
IEEE Journal of Photovoltaics, 4 525 (2014)

* 34. Minority carrier lifetime in silicon photovoltaics: the effect of oxygen precipitation
J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster
Solar Energy Materials and Solar Cells, 120 402 (2014)
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33. Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
A.L. Blum, J.S. Swirhun, R.A. Sinton, F. Yan, S. Herasimenka, T. Roth, K. Lauer, J. Haunschild, B. Lim, K. Bothe, Z. Hameiri, B. Seipel, R. Xiong, M. Dhamrin, J.D. Murphy
Proceedings of the IEEE 39th Photovoltaic Specialists Conference (PVSC 2013), pages 1396 to 1401 (2013)

* 32. On the mechanism of recombination at oxide precipitates in silicon
J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster
Applied Physics Letters, 102 042105 (2013)
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31. Fabrication of 'finger-geometry' silicon solar cells by electrochemical anodisation
G.F. Martins, A.J.R. Thompson, B. Goller, D. Kovalev, J.D. Murphy
Journal of Materials Science, 48 2977 (2013)

* 30. The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750ºC
J.D. Murphy, R.J. Falster
Journal of Applied Physics, 112 113506 (2012)
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29. The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon
J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster
Invited paper in ECS Transactions, 50 (5) 137 (2012)

* 28. Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
K. Bothe, R.J. Falster, J.D. Murphy
Applied Physics Letters, 101 032107 (2012)
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27. Chemical etching to dissolve dislocation cores in multicrystalline silicon
N.J. Gregori, J.D. Murphy, J.M. Sykes, P.R. Wilshaw
Physica B, 407 2970 (2012)

* 26. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: an application to oxide precipitates in silicon
J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 111 113709 (2012)
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* 25. Spin-dependent recombination in Czochralski silicon containing oxide precipitates
V. Lang, J.D. Murphy, R.J. Falster, J.J.L. Morton
Journal of Applied Physics, 111 013710 (2012)
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* 24. The effect of oxide precipitates on minority carrier lifetime in p-type silicon
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 110 053713 (2011)
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23. Contamination of silicon by iron at temperatures below 800°C
J.D. Murphy, R.J. Falster
Physica Status Solidi Rapid Research Letters, 5 370 (2011)

22. Recombination at oxide precipitates in silicon
J.D. Murphy, K. Bothe, R. Krain, M. Olmo, V.V. Voronkov, R.J. Falster
Solid State Phenomena, 178-179 205 (2011)

* 21. The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
Z. Zeng, J.D. Murphy, R.J. Falster, X. Ma, D. Yang, P.R. Wilshaw
Journal of Applied Physics, 109 063532 (2011)
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20. Minority carrier lifetime in Czochralski silicon containing oxide precipitates
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
ECS Transactions, 33 (11) 121 (2010)

19. Determination of grain orientations in multi-crystalline silicon by reflectometry
Y. Wang, J.D. Murphy, P.R. Wilshaw
Journal of the Electrochemical Society, 157 H884 (2010)

18. An investigation into fracture of multi-crystalline silicon
B.R. Mansfield, D.E.J. Armstrong, P.R. Wilshaw, J.D. Murphy
Solid State Phenomena, 156-158 55 (2010)
Open access via the above link.

17. Characterisation of plastic zones around crack-tips in pure single-crystal tungsten using electron backscatter diffraction
J.D. Murphy, A.J. Wilkinson, S.G. Roberts
IOP Conference Series: Materials Science and Engineering, 3 012015 (2009)

16. Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
C.R. Alpass, A. Jain, J.D. Murphy, P.R. Wilshaw
Journal of the Electrochemical Society, 156 H669 (2009)

15. Nitrogen in silicon: diffusion at 500 to 700°C and interaction with dislocations
C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw
Materials Science and Engineering B, 159-160 95 (2009)

14. The mechanical properties of tungsten grown by chemical vapour deposition
J.D. Murphy, A. Giannattasio, Z. Yao, C.J.D. Hetherington, P.D. Nellist, S.G. Roberts
Journal of Nuclear Materials, 386-388 583 (2009)

* 13. Nitrogen diffusion and interaction with dislocations in single-crystal silicon
C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw
Journal of Applied Physics, 105 013519 (2009)
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12. Nanoindentation and micromechanical testing of iron-chromium alloys implanted with iron ions
F.M. Halliday, D.E.J. Armstrong, J.D. Murphy, S.G. Roberts
Advanced Materials Research, 59 304 (2009)

11. Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
C.R. Alpass, J.D. Murphy, A. Jain, P.R. Wilshaw
ECS Transactions, 16 (6) 249 (2008)

10. Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
C. R. Alpass, J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Physica Status Solidi (a), 204 2256 (2007)

* 9. Enhanced oxygen diffusion in highly-doped p-type Czochralski silicon
J.D. Murphy, P.R. Wilshaw, B.C. Pygall, S. Senkader, R.J. Falster
Journal of Applied Physics, 100 103531 (2006)
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8. Nitrogen-doped silicon: mechanical, transport and electrical properties
J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, D. Emiroglu, J.H. Evans-Freeman, R.J. Falster, P.R. Wilshaw
ECS Transactions, 3 (4) 239 (2006)

7. Nitrogen in silicon: transport and mechanical properties
J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Nuclear Instruments and Methods in Physics Research B, 253 113 (2006)

6. Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Materials Science and Engineering B, 134 176 (2006)

5. The influence of nitrogen on dislocation locking in float-zone silicon
J.D. Murphy, A. Giannattasio, C.R. Alpass, S. Senkader, R.J. Falster, P.R. Wilshaw
Solid State Phenomena, 108-109 139 (2005)

4. High resolution deep-level transient spectroscopy applied to extended defects in silicon
J.H. Evans-Freeman, D. Emiroglu, K.D. Vernon-Parry, J.D. Murphy, P.R. Wilshaw
Journal of Physics: Condensed Matter, 17 S2219 (2005)

3. Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Journal of the Electrochemical Society, 152 G460 (2005)

2. Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Physica Status Solidi (a), 202 926 (2005)

1. Impurity locking of dislocations in silicon
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Proceedings of the 206th Meeting of The Electrochemical Society, High Purity Silicon VIII, 2004-05 39 (2004)