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Publications

Journal Publications

2017

2016

2015

  • A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P. M. Gammon, M. Jennings, M. Thomas, C. Fisher, and Y. Sharma
    Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
    Nanotechnology, vol. 26, p. 115203, (2015)

2014

  • E. Donchev, J. S. Pang, P. M. Gammon, A. Centeno, F. Xie, P. K. Petrov, J. D. Breeze, M. P. Ryan, D. J. Riley and N. McN. Alford
    The rectenna device: From theory to practice (a review)
    (OPEN ACCESS) MRS Energy & Sustainability, 1, pp. 1 (2014)

  • C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, P. M. Gammon, A. Perez-Tomas, S. M. Thomas, S. E. Burrows, and P. A. Mawby
    Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process
    Semiconductor Manufacturing, IEEE Transactions on, vol. 27, pp. 443-451, (2014)

  • M. R. Jennings, C. A. Fisher, S. M. Thomas, Y. Sharma, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, F. Li, P. A. Mawby
    Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications
    Physics of Semiconductor Devices pp. 929-932 (2014)

2013

  • P. M. Gammon, A. Pérez-Tomás, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley, and P. A. Mawby
    Modelling the inhomogeneous SiC Schottky interface
    J. Appl. Phys. 114, 223704 (2013)

  • A. Pérez-Tomás, A. Fontserè, M. R. Jennings, P. M. Gammon
    Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
    Materials Science in Semiconductor Processing, 16, 1336 (2013)
  • A. Pérez-Tomás, A. Fontserè, M. Placidi, M. R. Jennings, P. M. Gammon
    Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC
    Modelling Simul. Mater. Sci. Eng., 21, 035004 (2013)
  • A. Pérez-Tomás, A. Fontsere, S. Sánchez, M. R. Jennings, P. M. Gammon, Y. Cordier
    Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
    Appl. Phys. Lett. 102, 023511 (2013)

2012

  • P. M. Gammon, E. Donchev, A. Perez-Tomas, V. A. Shah, J. S. Pang, P. K. Petrov, M. R. Jennings, C. A. Fisher, P. A. Mawby, D. R. Leadley, and N. McN. Alford
    A study of temperature-related non-linearity at the metal-silicon interface
    J. Appl. Phys. 112, 114513 (2012)

  • A. Fontsere, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza and M. Nafria.
    Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
    Nanotechnology, 23, 395204 (2012)
  • M. R. Jennings, A. Pérez-Tomás, A. Bashir, A. Sanchez, A. Severino, P. J. Ward, S. M. Thomas, C. Fisher, P. M. Gammon, M. Zabala, S. E. Burrows, B. Donnellan, D. P. Hamilton, D. Walker and P. A. Mawby.
    Bow Free 4″ Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates
    ECS Solid State Lett. 1, 6, 85 (2012)

2011

  • A. Fontsere, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza and M. Nafria.
    Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
    Appl. Phys. Lett. 99, 213504 (2011)

  • A. Fontsere, A. Perez-Tomas, M. Placidi, P. Fernandez-Martinez, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon and M. R. Jennings.
    Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET.
    Microelectronic Engineering, 88, 1340, (2011)

  • A. Perez-Tomas, M. Placidi, A. Fontsere, P. M. Gammon and M. R. Jennings.
    Temperature behavior and modeling of ohmic contacts to Si(+) implanted n-type GaN.
    Microelectronics Reliability, 51, 1325 (2011)

2010

  • P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, O. J. Guy, N. Rimmer, J. Llobet, N. Mestres, P. Godignon, M. Placidi, M. Zabala, J. A. Covington, and P. A. Mawby.
    Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices.
    Appl. Phys. Lett. 97, 013506 (2010)

  • P. M. Gammon, A. Perez-Tomas, M. R. Jennings, V. A. Shah, S. A. Boden, .M. C. Davis, S. E. Burrows, G. J. Roberts, J. A. Covington, and P. A. Mawby.
    Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by MBE deposition.
    J. Appl. Phys. 107, 124512 (2010)

2009

  • P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, V. A. Shah, J. A. Covington, and P. A. Mawby.
    Analysis of inhomogeneous Ge/SiC heterojunction diodes.
    J. Appl. Phys. 106, 093708 (2009)

  • A. Perez-Tomas, M. Lodzinski, O. J. Guy, M. R. Jennings, M. Placidi, J. Llobet, P. M. Gammon, M. C. Davis, J. A. Covington, S. E. Burrows, and P. A. Mawby.
    Si/SiC bonded wafer: A route to carbon free SiO2 on SiC.
    Appl. Phys. Lett. 94, 103510 (2009)

2008

  • P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, and P. A. Mawby.
    Characterization of n-n Ge/SiC heterojunction diodes.
    Appl. Phys. Lett. 93, 112104 (2008)

  • A. Perez-Tomas, M. R. Jennings, P. M. Gammon, G. J. Roberts, P. A. Mawby, J. Millan, P. Godignon, J. Montserrat, N. Mestres.
    SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator.
    Microelectronic Engineering, 85, 4704, (2008)

  • M. R. Jennings, A. Perez-Tomas, O. J. Guy, R. Hammond, S. E. Burrows, P. M. Gammon, M. Lodzinski, J. A. Covington, and P. A. Mawby.
    Si/SiC Heterojunctions Fabricated by Direct Wafer Bonding.
    Electrochem. Solid-State Lett. 11, H306 (2008)

Selected Conference Publications

  • P. M. Gammon, A. Perez-Tomas, M. R. Jennings, A.M. Sanchez, C. A. Fisher, S. T. Thomas, B. T. Donnellan, and P. A. Mawby.
    Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction
    ECSCRM, Sep 2012, St. Petersburg, Russia (2013)

  • J. S. Pang, P. M. Gammon, E. Donchev, F. Xie, A. Centeno, P. K. Petrov, M. P. Ryan, N. Alford.
    Nanoantenna for direct solar energy extraction.
    MRS Fall Meeting, Oct 2012, Boston, USA (2012)

  • P. M. Gammon, E. Donchev, J. S. Pang, T. Wang, B. Zou, P. K. Petrov and N. M. Alford
    The modelling of inhomogeneous Si Schottky barrier diodes
    U.K. Semiconductor, July 2012, Sheffield, UK (2012)


PhD Thesis